![]() ![]() However, the ability to enhance efficiency of GaN-based RF transistor simultaneously with high output power density is still limited by the gain of the device, making high gain a critical need at W-Band at mm-wave frequencies.Works in this dissertation focus on improving gain and efficiency of N-polar GaN deep recess HEMTs. As an alternative, the N-polar (000-1) GaN deep recess HEMTs can overcome those disadvantages and outperform Ga-polar GaN devices with excellent output power and efficiency at 94 GHz. While GaN technologies utilizing the Ga-polar (0001) orientation have shown good performance in W-band, its performance is saturated due to the DC-RF dispersion and the limit on device gate to channel distance. GaN-based high electron mobility transistors (HEMTs) have emerged to be a leading technology for RF millimeter-wave application. ![]()
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